ULTRATHIN INDIUM TIN OXIDE ACCUMULATION MODE ELECTROLYTE-GATED TRANSISTORS FOR BIOELECTRONICS
Ludovico Migliaccio1,2,3, Mehmet Girayhan Say1, Gaurav Pathak1, Mary J. Donahue1, Eric Daniel Głowacki1,2,3
1Laboratory of Organic Electronics, Campus Norrköping, Linköping University, SE-60174, Norrköping, Sweden; 2Wallenberg Centre for Molecular Medicine, Linköping University, SE-58185, Linköping, Sweden; 3Central European Institute of Technology, Brno University of Technology, Purkyňova 123, 61200 Brno, Czech Republic
Electrochemical and electrolyte-gated transistor architectures have emerged as powerful components for bioelectronic sensors and biopotential recording devices. For amplification of weak electrophysiological signals, maximum transconductance, high cutoff frequencies, and large on/off ratios are key desired parameters. Organic conducting polymer devices have recently dominated the field, especially where flexible and conformable in vivo electronics are necessary. Herein we report flexible ultrathin amorphous indium tin oxide (ITO) electrolyte-gated transistors (EGTs). These accumulation-mode devices combine high transconductance, excellent on/off ratio, and fast modulation with excellent stability and the possibility of optically transparent layouts. While normally oxides are considered brittle, we obtain mechanically flexible and robust ITO layers by room temperature deposition of amorphous and ultrathin (30 nm) layers onto parylene substrates, which results in low strain. Devices survive bending and deformation tests. Based on their stability and performance, indium tin oxide EGTs represent a promising avenue for bioelectronic devices.
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